Semiconductor processing methods of forming openings to devices and substrates, exposing material from which photoresist cannot be substantially selectively removed

ABSTRACT

In one aspect, the invention provides a method of exposing a material from which photoresist cannot be substantially selectively removed utilizing photoresist. In one preferred implementation, a first material from which photoresist cannot be substantially selectively removed is formed over a substrate. At least two different material layers are formed over the first material. Photoresist is deposited over the two layers and an opening formed within the photoresist over an outermost of the two layers. First etching is conducted through the outermost of the two layers within the photoresist opening to outwardly expose an innermost of the two layers and form an exposure opening thereto. After the first etching, photoresist is stripped from the substrate. After the stripping, a second etching is conducted of the innermost of the two layers within the exposure opening. In another aspect, the invention provides a method of forming a contact opening to a device formed adjacent an organic insulating dielectric material. In yet another aspect, the invention provides a method of forming a series of conductive lines within an organic insulating dielectric material.

TECHNICAL FIELD

This invention relates generally to semiconductor processing methods,including methods of forming contact openings to devices, exposingmaterial from which photoresist cannot be substantially selectivelyremoved, forming a series of conductive lines, and removing photoresistfrom substrates.

BACKGROUND OF THE INVENTION

There is a continuing goal in semiconductor processing to fabricatesmaller and denser circuits. Correspondingly, the individual circuitcomponents continue to be placed closer and closer together. Individualcircuit elements or groups of elements are typically connected togetherby conductive lines running over the substrate. Conductive lines withina given layer, as well as conductive lines in different layers, aretypically electrically isolated from one another by dielectric materialscommonly referred to as dielectrics.

Insulating dielectric materials exhibit a property known as a dielectricconstant. Such is effectively a measurement of capacitance between twospaced conductors. The ratio of the capacitance between two conductorswithin a given material between them to the capacitance of the same twoconductors with nothing (a vacuum) between them is known as thedielectric constant of the given material. Thus, a material with a highdielectric constant placed between two conductors increases thecapacitance between the conductors. Where such materials would be highlydesirable as capacitor dielectrics in capacitor constructions, suchmaterials are highly undesirable as insulating material betweenconductors. Unneeded capacitance between conductive lines slows andotherwise adversely affects circuit performance.

Silicon dioxide has typically been a preferred interlevel dielectriclayer material of choice. Although such material has a high dielectricconstant, the prior art spacing between conductive components has beensufficiently great from one another to result in acceptable circuitdesigns. Yet as circuit density increases, and thus the spacing betweenadjacent devices decreases, there is a continuing goal to find anddevelop improved low dielectric constant materials for use as interleveldielectrics. Such materials can, however, have their own associateddrawbacks with respect to fabrication.

For example, one general class of low dielectric constant materialsdesirable for interlevel dielectrics are organic insulating materialssuch as parylene and polytetrafluoroethylene. Materials such as thesehave been shown to have very low dielectric constants of 2.0 or less,and are stable under high moisture and high temperature conditions.However, it is difficult to pattern vias into these materials utilizingphotoresist as the photoresist cannot be readily stripped offselectively from these materials. The organic nature of photoresist andthe organic insulating dielectric layer materials would make selectivestripping of the two very difficult, as best.

One proposed technique which does enable utilization of these lowdielectric constant materials and photoresist includes enlarging thecontact area where the contact is to be made. For example, consider aseries of spaced conductive lines formed at the same substantial levelrelative to a semiconductor substrate, and having organic insulatingdielectric layer material therebetween. Consider also a silicon dioxidelayer overlying both the conductive lines and organic insulatingdielectric layer material, and through which a contact opening utilizingphotoresist is to be made to one of the conductive lines. If the contactopening to the line is slightly misaligned such that the organicinsulator is also exposed, etching of the silicon dioxide selectivelyrelative to both the conductive line and organic material can beconducted such that disastrous over-etch will not occur. Yet, subsequentphotoresist strip will undesirably also result in etching of the organicinsulating dielectric material exposed within the contact opening. Suchcould result in destruction of the circuit. Such can be prevented byenlarging of the contact area of the line to which the contact openingis to be etched to avoid exposure of the organic material upon maskmisalignment of a certain degree. However, this is at the expense ofconsuming precious wafer real estate.

Accordingly, a need remains to develop improved techniques utilizingphotoresist in etchings involving organic dielectric layer materials.Although the invention spawned from this concern, the artisan willappreciate applicability of the invention in other semiconductorprocessing areas, with the invention only being limited by theaccompanying claims appropriately interpreted in accordance with theDoctrine of Equivalents.

SUMMARY

In but one aspect, the invention provides a method of exposing amaterial from which photoresist cannot be substantially selectivelyremoved utilizing photoresist. In one preferred implementation, a firstmaterial from which photoresist cannot be substantially selectivelyremoved is formed over a substrate. At least two different materiallayers are formed over the first material. Photoresist is deposited overthe two layers and an opening formed within the photoresist over anoutermost of the two layers. First etching is conducted through theoutermost of the two layers within the photoresist opening to outwardlyexpose an innermost of the two layers and form an exposure openingthereto. After the first etching, photoresist is stripped from thesubstrate. After the stripping, a second etching is conducted of theinnermost of the two layers within the exposure opening.

In accordance with another aspect, the invention provides a method offorming a contact opening to a device formed adjacent an organicinsulating dielectric material. In yet another aspect, the inventionprovides a method of forming a series of conductive lines within anorganic insulating dielectric material.

In still another aspect of the invention, laser ablation of photoresistis utilized. In one implementation, the invention comprises forming afirst material over a substrate. Photoresist is deposited over the firstmaterial and an opening is formed within the photoresist over the firstmaterial. Etching is then conducted into the first material through thephotoresist opening. After the etching, the photoresist is laser ablatedfrom over the first material.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic sectional view of a semiconductor waferfragment at one processing step in accordance with the invention.

FIG. 2 is a view of the FIG. 1 wafer at a processing step subsequent tothat shown by FIG. 1.

FIG. 3 is a view of the FIG. 1 wafer at a processing step subsequent tothat shown by FIG. 2.

FIG. 4 is a view of the FIG. 1 wafer at a processing step subsequent tothat shown by FIG. 3.

FIG. 5 is a view of the FIG. 1 wafer at a processing step subsequent tothat shown by FIG. 4.

FIG. 6 is a view of the FIG. 1 wafer at a processing step subsequent tothat shown by FIG. 5.

FIG. 7 is a diagrammatic sectional view of another semiconductor waferfragment at another processing step in accordance with the invention.

FIG. 8 is a view of the FIG. 7 wafer at a processing step subsequent tothat shown by FIG. 7.

FIG. 9 is a view of the FIG. 7 wafer at a processing step subsequent tothat shown by FIG. 8.

FIG. 10 is a diagrammatic sectional view of still another semiconductorwafer fragment at still another processing step in accordance with theinvention.

FIG. 11 is a view of the FIG. 10 wafer at a processing step subsequentto that shown by FIG. 10.

FIG. 12 is a view of the FIG. 10 wafer at a processing step subsequentto that shown by FIG. 11.

FIG. 13 is a diagrammatic sectional view of yet another semiconductorwafer fragment at yet another processing step in accordance with theinvention.

FIG. 14 is a view of the FIG. 13 wafer at a processing step subsequentto that shown by FIG. 13.

FIG. 15 is a view of the FIG. 13 wafer at a processing step subsequentto that shown by FIG. 14.

FIG. 16 is a view of the FIG. 13 wafer at a processing step subsequentto that shown by FIG. 15.

FIG. 17 is a diagrammatic sectional view of another semiconductor waferfragment at another processing step in accordance with the invention.

FIG. 18 is a view of the FIG. 17 wafer at a processing step subsequentto that shown by FIG. 17.

FIG. 19 is a diagrammatic sectional view of another semiconductor waferfragment at another processing step in accordance with the invention.

FIG. 20 is a view of the FIG. 19 wafer at a processing step subsequentto that shown by FIG. 19.

FIG. 21 is a diagrammatic sectional view of another semiconductor waferfragment at another processing step in accordance with the invention.

FIG. 22 is a view of the FIG. 21 wafer at a processing step subsequentto that shown by FIG. 21.

FIG. 23 is a view of the FIG. 21 wafer at a processing step subsequentto that shown by FIG. 22.

FIG. 24 is a view of the FIG. 21 wafer at a processing step subsequentto that shown by FIG. 23.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

Referring initially to the embodiment of FIGS. 1-6, a semiconductorwafer fragment in process is indicated generally with reference numeral10. Such comprises a substrate 12, for example in the form of a bulkmonocrystalline silicon wafer. In the context of this document, the term“semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

An organic insulating dielectric material layer 14 is formed outwardlyof substrate 12. Example and preferred materials includes parylene,parylene-N, parylene-F, polytetrafluoroethylene (PTFE), andperfluorocyclobutane (PFCB). Layer 14 constitutes a first material fromwhich photoresist cannot be substantially selectively removed over asubstrate, for example, by chemical etching. Devices 16 and 18 areformed over substrate 12 relative to first material layer 14. In thepreferred embodiment, such constitute conductive lines or runners towhich electrical contact is desired to be made. As preferred and shown,lines 16 and 18 are formed laterally adjacent and in contact withorganic insulating dielectric material layer 14. Such layer is formed toproject elevationally outwardly beyond the outermost portions oflines/devices 16 and 18. Exemplary techniques for making this or otherstructures are disclosed in co-pending U.S. patent application Ser. No.08/677,514, filed on Jul. 10, 1996, now U.S. Pat. No. 6,107,183 entitled“Interlevel Dielectric Structure And Methods For Forming The Same”, andlisting as inventors, Gurtej S. Sandhu, Anand Srinivasan, and Ravi Iyer,and is hereby incorporated by reference.

Referring to FIG. 2, two layers 20 and 22 are formed over devices 16, 18and organic insulating dielectric material layer 14. Such ideally arecomprised of two different materials, and preferably two differentinorganic insulating dielectric materials. Layer 20 constitutes aninnermost of the two layers and is formed to a greater thickness thanlayer 22, which constitutes an outermost of the two layers. Exemplarythicknesses for layers 20 and 22 are 8000 Angstroms and 1000 Angstroms,respectively. Ideally, innermost layer 20 is fabricated of a materialwhich can be substantially selectively etched relative to outermostlayer 22. As well, outermost layer 22 is ideally fabricated of amaterial which can be substantially selectively etched relative toinnermost layer 20. Further, both of layers 20 and 22 ideally comprise amaterial from which photoresist can be substantially selectivelychemically removed. An exemplary material for layer 20 is doped orundoped SiO₂, with an exemplary material for layer 22 comprising Si₃N₄.

Referring to FIG. 3, a layer 24 of photoresist is deposited over layers22 and 20. An opening 25 is formed within photoresist layer 24 overoutermost layer 22 and over device 16. In this embodiment, an exemplarycontact opening will be formed relative to device 16, with the maskutilized to form opening 25 being shown inadvertently slightlymisaligned to the right.

Referring to FIG. 4, first etching is conducted through outermost layer22 within photoresist opening 25 to outwardly expose innermost layer 20,and effectively form a contact or exposure opening 26 thereto.Preferably, the etching of layer 22 is conducted substantiallyselectively relative to layer 20. An exemplary chemistry for suchetching for layer 22 constitutes Si₃N₄, and layer 20 constitutes SiO₂includes HBr and CF₄ plasma.

Referring to FIG. 5, photoresist layer 24 has been stripped fromsubstrate 10, ideally substantially selective relative to layers 20 and22. After the stripping, second etching is conducted of innermost layer20 within exposure/contact opening 26. In the illustrated embodiment,such second etching is conducted to extend contact/exposure opening 26inwardly to effectively outwardly expose first material layer 14 anddevice 16. Such second etching also is preferably conducted to besubstantially selective relative to outer layer 22 and substantiallyselective relative to first material 14. Where layer 20 comprises SiO₂,layer 22 comprises Si₃N₄, and layer 14 comprises parylene, such anexemplary etch chemistry is O₂ and CF₄ plasma. While processing of twolayers 20 and 22 overlying devices 16 and 18 are shown in thisembodiment, more than two layers might also be utilized.

Such provides one exemplary semiconductor processing method of exposinga material from which photoresist cannot be substantially selectivelyremoved utilizing photoresist in the process, and of forming a contactopening to a device formed adjacent such material.

Referring to FIG. 6, contact opening 26 is effectively plugged with anelectrically conductive material 27, such as tungsten, after the secondetching. An exemplary technique would be to deposit tungsten and etchsuch back by a resist etchback process or by an abrasive polishingprocess. Outermost layer 22 can remain as shown, or optionally beremoved either before or after the illustrated plugging.

An alternate embodiment is described with reference to FIGS. 7-9. Likenumerals from the first described embodiment are utilized whereappropriate, with differences being indicated with the suffix “a” orwith different numerals. In FIG. 7, substrate 10 a includes devices 16and 18 and an organic insulating dielectric material layer 14 a formedthereover. Thus, devices 16 and 18 also in this embodiment are formedboth laterally adjacent and in contact with organic insulatingdielectric material layer 14 a, with such layer here projectingelevationally outwardly beyond and over devices 16 and 18. In thisembodiment, outer layer 22 a is provided to a greater thickness thaninner layer 20 a. Exemplary and preferred materials for layer 22 a and20 a are either SiO₂ or Si₃N₄ as in the above embodiment.

Referring to FIG. 8, initial contact or exposure opening 26 a is etchedthrough layer 22 a effectively to outwardly expose innermost layer 20 a.If for example layer 20 a constitutes Si₃N₄ and layer 22 a constitutesSiO₂, an exemplary etch chemistry would include CF₄ and CHF₃ plasma. Ifthe compositions of these materials were reversed, an exemplarychemistry would be that as described above with respect to the firstdescribed embodiment.

Referring to FIG. 9, photoresist layer 24 has been stripped. After suchstripping, second etching is conducted of innermost layer 20 a. Suchetching preferably and as shown is initially conducted to at leastoutwardly expose first material layer 14 a. Etching is then preferablycontinued of first material layer 14 a for a period of time effective tooutwardly expose device 16. Such is also preferably conductedsubstantially selective relative to layers 22 a, 20 a, and device 16.Where layers 22 a, 20 a, 14 a and device 16 constitute SiO₂, Si₃N₄,parylene and TiN/Al, an exemplary etch chemistry includes O₂ and CF₄plasma. Subsequent plugging of contact opening 26 a can be conducted.Layers 22 a and 20 a can either be optionally removed before or aftersuch plugging.

Another alternate embodiment is described with reference to FIGS. 10-12.Like numerals from the first described embodiment are utilized whereappropriate, with differences being indicated with the suffix “b” orwith different numerals. In FIG. 10, a substrate 10 b is fabricated suchthat devices 16 and 18 project elevationally outward beyond organicinsulating dielectric material layer 14 b. Alternately, but lesspreferred, devices 16 and 18 can have outer surfaces coincident with theouter surface of organic insulating dielectric material layer 14 b.Layers 20 b and 22 b are provided outwardly of the devices and firstmaterial layer.

Referring to FIGS. 11 and 12, processing is conducted analogously tothat described above. Specifically in FIG. 11, first etching isconducted through outermost layer 22 b within photoresist opening 25 tooutwardly expose innermost layer 20 b and form a contact or otherexposure opening 26 b thereto. FIG. 12 illustrates subsequent strippingof the photoresist and second etching of innermost layer 20 b ideallysubstantially selectively relative to outermost layer 22 b and organicinsulating dielectric material layer 14 b to outwardly expose device 16.Subsequent plugging of such contact opening could then occur. Outermostlayer 22 b could optionally remain or be removed.

Still another alternate embodiment is described with reference to FIGS.13-16. Like numerals from the first described embodiment are utilizedwhere appropriate, with differences being indicated with the suffix “c”or with different numerals. In FIG. 13, a substrate 10 c is illustratedin a method of forming a series of conductive lines within an organicinsulating dielectric material from which photoresist cannot besubstantially selectively removed. In this embodiment, organicinsulating dielectric material layer 14 c is formed over some substrate12 c. A photoresist layer 24 c is formed outwardly of layer 22 c andincludes a series of conductive line openings 25 c formed in a desiredpattern of conductive lines running into and out of the plane of thepage upon which FIG. 13 lies.

Referring to FIG. 14, first etching is conducted through outermost layer22 c within the series of photoresist openings 25 c to outwardly exposeinnermost layer 20 c and form a series of conductive line patternopenings 26 c within outermost layer 22 c.

Referring to FIG. 15, photoresist layer 24 c has been stripped andsecond etching conducted of innermost layer 20 c and first materiallayer 14 c to form conductive line pattern openings 26 c within firstmaterial 14 c. Layers 22 c and/or 20 c can optionally be removed fromthe substrate. Referring to FIG. 16, conductive line pattern openings 26c within material 14 c are filled with conductive material andplanarized back to form a series of conductive lines 35 within material14 c.

Yet another embodiment is next described with reference to FIGS. 21-24.Like numerals from the first described embodiment are utilized whereappropriate, with differences being indicated with the suffix “f” orwith different numerals. In FIG. 21, a substrate 10 f is illustrated ina method of forming a series of conductive lines within an organicinsulating dielectric material from which photoresist cannot besubstantially selectively removed. In this embodiment, a first ororganic insulating dielectric material layer 14 f is formed over somesubstrate 12 f. A second or dielectric material layer 20 f from whichphotoresist can be substantially selectively chemically removed isprovided over layer 14 f. A photoresist layer 24 f is formed outwardlyof layer 20 f and includes a series of conductive line openings 25 fformed in a desired pattern of conductive lines running into and out ofthe plane of the page upon which FIG. 21 lies.

Referring to FIG. 22, first etching is conducted into the secondmaterial layer 20 f through photoresist openings 25 f, yet to a degreeinsufficient to outwardly expose first material layer 14 f. Secondmaterial line pattern openings 26 f in material 20 f are thus formed. Anexemplary etch chemistry where layer 20 f constitutes SiO₂ includes O₂and CF₄ plasma for a selected period of time insufficient to reach layer14 f.

Referring to FIG. 23, photoresist layer 24 f has been stripped andblanket etching conducted of second material layer 20 f and firstmaterial layer 14 f to form first material openings 29 to substrate 12f. An example chemistry is O₂ and CF₄ plasma. Depending on the time ofsuch etch and the relative thicknesses of layers 14 f and 20 f, aportion of second material layer 20 f can remain.

Referring to FIG. 24, the remaining portion of layer 20 f is optionallyremoved, and openings 29 filled with and electrically conductivematerial 35 to form electrically conductive material within layer 14 f.

Another embodiment is described in FIGS. 17 and 18. Like numerals fromthe first described embodiment are utilized where appropriate, withdifferences being indicated with the suffix “d” or with differentnumerals. In this embodiment substrate 10 d (FIG. 17), an organicinsulating dielectric material layer 14 d is formed over previouslypatterned conductive lines 16 d and 18 d, preferably as in the FIGS. 7-9embodiment. Photoresist layer 24 d is provided over and on organicinsulating dielectric layer 14 d. Opening 25 d is formed withinphotoresist layer 24 d over organic insulating dielectric layer 14 d.Timed etching is then conducted into first material layer 14 d throughphotoresist opening 25 d effective to form a contact opening 26 d todevice 16 d (FIG. 18). Subsequently, photoresist layer 24 d is laserablated from over first material 14 d. An example laser and energy forsuch process includes a KrF laser operating at a wavelength of 248nanometers and energy at 2.0 J/cm². Accordingly, such laser ablatingoccurs when both first material layer 14 d and photoresist layer 24 dare outwardly exposed.

An alternate embodiment to that of FIGS. 17 and 18 is depicted in FIGS.19 and 20. Like numerals from the FIGS. 17 and 18 embodiment areutilized where appropriate, with differences being indicated bysubstitution of the suffix “e” or with different numerals. Referringinitially to FIG. 19, a thin light-absorbing layer 45 is formedoutwardly of layer 14 d prior to deposition of photoresist layer 24 d,such that it is interposed therebetween. Exemplary and preferredmaterials include Si₃N₄, TiN, Al, and W. Such a layer can facilitateabsorption of laser energy by photoresist layer 24 d, and effectivelyreflect such laser energy from impinging upon organic insulatingdielectric layer 14 d.

FIG. 20 illustrates such layer 45 remaining after laser ablation oflayer 24 d. Layer 45 can optionally remain or be removed prior toplugging of extended contact opening 26 e. Layer 45 is preferably chosento be very thin, and most preferably to be substantially equal toone-fourth of the wavelength of the laser light being utilized. Forexample, for a KrF laser having a wavelength of 248 nanometers, anexemplary preferred thickness for layer 45 is about one/fourth of thiswavelength, which equals 62 Angstroms.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A semiconductor processing method comprising:forming a first material from which photoresist cannot be substantiallyselectively removed over a substrate; forming a plurality of layers overthe first material, at least two of the layers being different from oneanother and comprising materials from which photoresist can beselectively removed, an uppermost of the at least two layers being afirst layer and another of the at least two layers being a second layer;depositing photoresist over the plurality of layers and forming anopening within the photoresist to the first layer; first etching throughthe first layer within the photoresist opening to expose the secondlayer and accordingly pattern the first layer into a mask over thesecond layer, the first etching, not exposing the first material; afterthe first etching, stripping the photoresist from the substrate to leavethe first layer mask as the uppermost mask over the second layer; andafter the stripping, second etching the second layer while utilizing theis first layer mask to pattern the second layer, the second etchingfirst exposing the first material.
 2. The semiconductor processingmethod of claim 1 wherein the second etching is conducted substantiallyselective relative to the first material.
 3. The semiconductorprocessing method of claim 1 wherein the second etching includes etchingthe first material.
 4. A method of exposing a material from whichphotoresist cannot be substantially selectively removed comprising:forming a first material from which photoresist cannot be substantiallyselectively removed over a substrate; forming at least two differentmaterial layers over the first material; depositing photoresist over thetwo layers and forming an opening within the photoresist over anoutermost of the two layers; first etching through the outermost of thetwo layers within the photoresist opening to outwardly expose an otherof the two layers and form an exposure opening thereto, the firstetching defining a mask from the outermost of the two layers and notexposing the first material; after the first etching, stripping thephotoresist from the substrate to leave the mask defined by theoutermost of the two layers as the outermost mask over said other of thetwo layers; and after the stripping, second etching said other of thetwo layers within the exposure opening to first outwardly expose thefirst material, the mask defined by the outermost of the two layersbeing utilized to pattern said other of the two layers during the secondetching.
 5. The method of claim 4 wherein the second etching isconducted substantially selective relative to the first material.
 6. Amethod of exposing a material from which photoresist cannot besubstantially selectively removed comprising: forming a first materialfrom which photoresist cannot be substantially selectively removed overa substrate; forming at least two layers over the first material, atleast one of the two layers being etchable substantially selectivelyrelative to the other, both of the two layers comprising a material fromwhich photoresist can be substantially selectively chemically removed;depositing photoresist over the two layers and forming an opening withinthe photoresist over an outermost of the two layers; first etchingthrough the outermost of the two layers within the photoresist openingto outwardly expose an innermost of the two layers and form an exposureopening thereto; after the first etching, stripping the photoresist fromthe substrate substantially selective relative to the two layers toleave the outermost of the two layers as an outermost mask over theinnermost of the two layers, the first etching not exposing the firstmaterial; and after the stripping, second etching the innermost of thetwo layers within the exposure opening to first outwardly expose thefirst material.
 7. The method of claim 6 wherein the second etching isconducted substantially selectively relative to the outermost of the twolayers.
 8. The method of claim 6 wherein the first etching is conductedsubstantially selectively relative to the innermost of the two layers.9. The method of claim 6 wherein the second etching is conductedsubstantially selective relative to the first material.
 10. A method offorming a contact opening to a device formed adjacent an organicinsulating dielectric material comprising: forming a device adjacent anorganic insulating dielectric material over a substrate; forming atleast two different material layers over the device and the organicinsulating dielectric material; depositing photoresist over the twolayers and forming an opening within the photoresist over the device;first etching through an outermost of the two layers within thephotoresist opening to outwardly expose an other of the two layers andform a contact opening thereto, the first etching not exposing theorganic insulating dielectric material; after the first etching,stripping the photoresist from the substrate to leave the etchedoutermost of the two layers as an outermost mask over said other of thetwo layers; and after the stripping, second etching said other of thetwo layers within the contact opening to first outwardly expose thedevice.
 11. The method of claim 10 further comprising plugging thecontact opening with an electrically conductive material after thesecond etching.
 12. The method of claim 10 wherein the second etchingcomprises exposing the organic insulating dielectric material andetching said other of the two layers substantially selective relative tothe organic insulating dielectric material and the device.
 13. Themethod of claim 10 wherein the second etching comprises exposing theorganic insulating dielectric material and etching said other of the twolayers and the organic insulating dielectric material substantiallyselective relative to the device.
 14. A method of forming a contactopening to a device formed adjacent an organic insulating dielectricmaterial comprising: forming a device adjacent an organic insulatingdielectric material over a substrate; forming at least two layers overthe device and the organic insulating dielectric material, at least oneof the two layers being etchable substantially selectively relative tothe other, both of the two layers comprising a material from whichphotoresist can be substantially selectively chemically removed;depositing photoresist over the two layers and forming an opening withinthe photoresist over the device; first etching through an outermost ofthe two layers within the photoresist opening to outwardly expose aninnermost of the two layers and form a contact opening through theoutermost of the two layers and to the innermost of the two layers, thefirst etching not exposing the organic insulating dielectric material;after the first etching, stripping the photoresist from the substratesubstantially selective relative to the two layers to leave the etchedoutermost of the two layers as an outermost mask over the innermost ofthe two layers; and after the stripping, second etching the innermost ofthe two layers within the contact opening to first outwardly expose thedevice.
 15. The method of claim 14 wherein the second etching isconducted substantially selectively relative to the outermost of the twolayers.
 16. The method of claim 14 wherein the first etching isconducted substantially selectively relative to the innermost of the twolayers.
 17. The method of claim 14 further comprising plugging thecontact opening with an electrically conductive material after thesecond etching.
 18. The method of claim 14 wherein the second etchingcomprises exposing the organic insulating dielectric material andetching the innermost of the two layers substantially selective relativeto the organic insulating dielectric material and the device.
 19. Themethod of claim 14 wherein the second etching comprises exposing theorganic insulating dielectric material and etching the innermost of thetwo layers and the organic insulating dielectric material substantiallyselective relative to the device.
 20. A method of forming a contactopening to a device formed adjacent an organic insulating dielectricmaterial comprising: forming a device laterally adjacent and in contactwith an organic insulating dielectric material over a substrate, theorganic insulating dielectric material projecting elevationallyoutwardly beyond the device; forming at least two inorganic insulatingdielectric layers over the device and the organic insulating dielectricmaterial, an innermost of the two layers being formed to a greaterthickness than an outermost of the two layers, the innermost of the twolayers being substantially selectively etchable relative to theoutermost of the two layers, the outermost of the two layers beingsubstantially selectively etchable relative to the innermost of the twolayers, both of the two layers comprising a material from whichphotoresist can be substantially selectively chemically removed;depositing photoresist over the two layers and forming an opening withinthe photoresist over the device; first etching through the outermost ofthe two layers within the photoresist opening substantially selectiverelative to the innermost of the two layers to outwardly expose theinnermost of the two layers and form a contact opening through theoutermost of the two layers and to the innermost of the two layers, thefirst etching not exposing the organic insulating dielectric material;after the first etching, stripping the photoresist from the substratesubstantially selective relative to the two layers to leave the etchedoutermost of the two layers as an outermost mask over the innermost ofthe two layers; after the stripping, second etching the innermost of thetwo layers within the contact opening substantially selective relativeto the outermost of the two layers and substantially selective relativeto the organic insulating dielectric material to first outwardly exposethe device; and plugging the contact opening with an electricallyconductive material after the second etching.
 21. The method of claim 20further comprising after the second etching and before the plugging,removing the outermost of the two layers from the substrate.
 22. Themethod of claim 20 further comprising after the second etching and afterthe plugging, removing the outermost of the two layers from thesubstrate.
 23. A method of forming a contact opening to a device formedadjacent an organic insulating dielectric material comprising: forming adevice laterally adjacent and in contact with an organic insulatingdielectric material over a substrate, the organic insulating dielectricmaterial projecting elevationally outwardly beyond the device and overthe device; forming at least two inorganic insulating dielectric layersover the device and the organic insulating dielectric material, aninnermost of the two layers being formed to a lesser thickness than anoutermost of the two layers, the outermost of the two layers beingsubstantially selectively etchable relative to the innermost of the twolayers, both of the two layers comprising a material from whichphotoresist can be substantially selectively chemically removed;depositing photoresist over the two layers and forming an opening withinthe photoresist over the device; first etching through the outermost ofthe two layers within the photoresist opening substantially selectiverelative to the innermost of the two layers to outwardly expose theinnermost of the two layers and form a contact opening through theoutermost of the two layers and to the innermost of the two layers, thefirst etching not exposing the organic insulating dielectric material;after the first etching, stripping the photoresist from the substratesubstantially selective relative to the two layers to leave the etchedoutermost of the two layers as an outermost mask over the innermost ofthe two layers; after the stripping, second etching the innermost of thetwo layers within the contact opening and the organic insulatingdielectric material to first outwardly expose the device; and pluggingthe contact opening with an electrically conductive material after thesecond etching.
 24. The method of claim 23 further comprising after thesecond, etching removing the outermost of the two layers from thesubstrate.
 25. The method of claim 23 further comprising after thesecond etching, removing the outermost and the innermost of the twolayers from the substrate.
 26. The method of claim 23 further comprisingafter the second etching and before the plugging, removing the outermostof the two layers from the substrate.
 27. The method of claim 23 furthercomprising after the second etching and before the plugging, removingthe outermost and the innermost of the two layers from the substrate.28. A method of forming a contact opening to a device formed adjacent anorganic insulating dielectric material comprising: forming a devicelaterally adjacent and in contact with an organic insulating dielectricmaterial over a substrate, the device projecting elevationally outwardbeyond the organic insulating dielectric material; forming at least twoinorganic insulating dielectric layers over the device and the organicinsulating dielectric material, an innermost of the two layers beingsubstantially selectively etchable relative to an outermost of the twolayers, the outermost of the two layers being substantially selectivelyetchable relative to the innermost of the two layers, both of the twolayers comprising a material from which photoresist can be substantiallyselectively chemically removed; depositing photoresist over the twolayers and forming an opening within the photoresist over the device;first etching through the outermost of the two layers within thephotoresist opening substantially selective relative to the innermost ofthe two layers to outwardly expose the innermost of the two layers andform a contact opening through the outermost of the two layers and tothe innermost of the two layers, the first etching not exposing theorganic insulating dielectric material; after the first etching,stripping the photoresist from the substrate substantially selectiverelative to the two layers to leave the etched outermost of the twolayers as an outermost mask over the innermost of the two layers; afterthe stripping, second etching the innermost of the two layers within thecontact opening substantially selective relative to the outermost of thetwo layers and substantially selective relative to the organicinsulating dielectric material to first outwardly expose the device; andplugging the contact opening with an electrically conductive materialafter the second etching.
 29. A method of forming a series of conductivelines within a material from which photoresist cannot be substantiallyselectively removed comprising: forming a first material from whichphotoresist cannot be substantially selectively removed over asubstrate; forming at least two layers over the first material, at leastone of the two layers being etchable substantially selectively relativeto the other, both of the two layers comprising a material from whichphotoresist can be substantially selectively chemically removed;depositing photoresist over the two layers and forming a series ofconductive line openings within the photoresist over an outermost of thetwo layers; first etching through the outermost of the two layers withinthe series of photoresist openings to outwardly expose an innermost ofthe two layers and form a series of conductive line pattern openingswithin the outermost of the two layers, the first etching not exposingthe first material; after the first etching, stripping the photoresistfrom the substrate substantially selective relative to the two layers toleave the etched outermost of the two layers as an outermost mask overthe innermost of the two layers; after the stripping, second etching theinnermost of the two layers and the first material to form theconductive line pattern openings within the first material, wherein thefirst material is first outwardly exposed during the second etching; andfilling the conductive line pattern openings within the first materialwith conductive material to form a series of conductive lines.